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Solid State Electronics - ELEC4603
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Campus: Kensington Campus
 
 
Career: Undergraduate
 
 
Units of Credit: 6
 
 
EFTSL: 0.12500 (more info)
 
 
Indicative Contact Hours per Week: 4
 
 
Enrolment Requirements:
 
 
Prereq: ELEC2133
 
 
Equivalent: ELEC3016
 
 
Fee Band: 2 (more info)
 
 
Further Information: See Class Timetable
 
  

Description

Band-structure and doping of semiconductors. Drift-Diffusion Equations; Density of states; Fermi function; Law of Mass Action. PN Junctions: Derivation of I-V characteristics. PN Junctions: Capacitance; Breakdown; Non-idealities. Bipolar Junction Transistor (BJT): Operation principles. BJT: Derivation of I-V characteristics. BJT: Ebers-Moll model; Non-idealities. MOSFET: Derivation of I-V characteristics. MOSFET: Structure; Threshold Voltage; Enhancement- & Depletion-mode. Microwave devices. Transistors for Digital Logic: TTL, ECL, CMOS. Optoelectronic & Photonic Devices: Direct Vs Indirect Band-gap devices. LEDs; Semiconductor Lasers; Photovoltaic Cells. Principles and key technologies involved in microfabrication of integrated circuits. Microfabrication of: MOSFETs; CMOS; BJTs.


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© The University of New South Wales (CRICOS Provider No.: 00098G), 2004-2011. The information contained in this Handbook is indicative only. While every effort is made to keep this information up-to-date, the University reserves the right to discontinue or vary arrangements, programs and courses at any time without notice and at its discretion. While the University will try to avoid or minimise any inconvenience, changes may also be made to programs, courses and staff after enrolment. The University may also set limits on the number of students in a course.